Molecular-beam epitaxial growth of p- and n-type ZnSe homoepitaxial layers

K. Ohkawa*, A. Ueno, T. Mitsuyu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

78 Scopus citations

Abstract

Undoped, p- and n-type ZnSe homoepitaxial layers have been successfully grown by molecular beam epitaxy on dry-etched substrates. ZnSe substrates were etched with a BCl3 plasma to eliminate polishing damage. The full width at half maximum of an X-ray rocking curve for a homoepitaxial layer has reached 21 arc sec. N-doped ZnSe homoepitaxial layers grown with the active-nitrogen doping technique have shown p-type conduction which is the evidence of p-type conduction in ZnSe. The n-type homoepitaxial layers have been grown with Cl doping. The Cl-doped homoepitaxial layers have shown high Hall mobilities relative to heteroepitaxial layers. These undoped, N-doped and Cl-doped layers have exhibited strain-free photoluminescence properties; free exciton emission, neutral acceptor-bound exciton emission and neutral donor-bound exciton emission showed a single peaks at 2.804, 2.7931 and 2.7980 eV, respectively.

Original languageEnglish (US)
Pages (from-to)375-384
Number of pages10
JournalJournal of Crystal Growth
Volume117
Issue number1-4
DOIs
StatePublished - Feb 2 1992
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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