Modification of textured silicon wafer surface morphology for fabrication of heterojunction solar cell with open circuit voltage over 700 mV

L. Fesquet*, S. Olibet, J. Damon-Lacoste, S. De Wolf, A. Hessler-Wyser, C. Monachon, C. Ballif

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

39 Scopus citations

Abstract

Crystalline silicon wafer (c-Si) can be extremely well passivated by plasma enhanced chemical vapor deposited (PECVD) amorphous silicon (a-Si:H) films. As a result, on flat substrates, solar cells with very high open circuit voltage are readily obtained. On textured substrates however the passivation is more cumbersome, likely due to the presence of localized recombinative paths situated at the pyramid valleys. Here, we show that this issue may be resolved by selecting a silicon substrate morphology featuring large pyramids. Chemical post-texturization treatments can further reduce the surface recombination velocity. This sequence has allowed us to fabricate solar cells with open circuit voltage over 700 mV, demonstrating also on device level the effect of pyramid density and surface micro-roughness on the surface passivation quality.

Original languageEnglish (US)
Title of host publication2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Pages754-758
Number of pages5
DOIs
StatePublished - Dec 1 2009
Event2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States
Duration: Jun 7 2009Jun 12 2009

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
CountryUnited States
CityPhiladelphia, PA
Period06/7/0906/12/09

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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