Modeling of reaction pathways of GaN growth by metalorganic vapor-phase epitaxy using TMGa/NH3/H2 system: A computational fluid dynamics simulation study

Akira Hirako*, Kazuhide Kusakabe, Kazuhiro Ohkawa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

61 Scopus citations

Abstract

A model of reaction pathways of GaN growth by metalorganic vapor-phase epitaxy was studied by computational fluid dynamics simulations. We included the formation of polymers such as [Ga-N]n and [MMGaNH]n (n = 2-6) in the reaction model in a TMGa/NH3/H2 system for the first time. The simulations using this reaction modeling successfully explained experimental growth rates at various temperatures, and clarified the main reaction pathway of GaN growth. The change in gas-phase chemistry due to temperature in the range of 300-1400 K was investigated. It was found that the type of reactive molecule changes with temperature, followed by the formation of different polymers in a certain temperature range, that is, [MMGaNH] N at 600-750 K and [Ga-N]n at higher temperatures.

Original languageEnglish (US)
Pages (from-to)874-879
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number2
DOIs
StatePublished - Feb 1 2005

Keywords

  • Computer simulation
  • MOVPE
  • Nitrides
  • Polymer formation
  • Reaction pathway

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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