Misfit dislocations in green-emitting InGaN/GaN quantum well structures

Pedro Da Costa*, R. Datta, M. J. Kappers, M. E. Vickers, C. J. Humphreys

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

Misfit dislocations (MDs) have been observed using transmission electron microscopy (TEM) in InGaN/GaN quantum well (MQW) structures grown under different metal-organic vapour phase epitaxy (MOVPE) regimes and with In-contents equal to or higher than 20%. These dislocations are even observed in a single quantum well 3 nm thick with an In-content of 22%. Conversely, no MDs were observed in QW structures with an In-content of 16%. The presence of MDs in the QW stack leads to strain relaxation which has been confirmed in the indium-rich structures by high resolution X-ray diffraction (HRXRD).

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
Pages639-643
Number of pages5
StatePublished - May 15 2006
Event2005 Materials Research Society Fall Meeting - Boston, MA, United States
Duration: Nov 28 2005Dec 2 2005

Publication series

NameMaterials Research Society Symposium Proceedings
Volume892
ISSN (Print)0272-9172

Other

Other2005 Materials Research Society Fall Meeting
CountryUnited States
CityBoston, MA
Period11/28/0512/2/05

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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