Minimal disturbed bits in writing resistive crossbar memories

Mohammed E. Fouda, Ahmed M. Eltawil, Fadi Kurdahi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Resistive memories are promising candidates for non-volatile memories. Write disturb is one of problems that facing this kind of memories. In this paper, the write disturb problem is mathematically formulated in terms of the bias parameters and optimized analytically. A closed form solution for the optimal bias parameters is calculated. Results are compared with the 1/2 and 1/3 bias schemes showing a significant improvement.
Original languageEnglish (US)
Title of host publicationProceedings of the 14th IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2018
PublisherAssociation for Computing Machinery, Incacmhelp@acm.org
ISBN (Print)9781450358156
DOIs
StatePublished - Jul 17 2018
Externally publishedYes

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