Resistive memories are promising candidates for non-volatile memories. Write disturb is one of problems that facing this kind of memories. In this paper, the write disturb problem is mathematically formulated in terms of the bias parameters and optimized analytically. A closed form solution for the optimal bias parameters is calculated. Results are compared with the 1/2 and 1/3 bias schemes showing a significant improvement.
|Original language||English (US)|
|Title of host publication||Proceedings of the 14th IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2018|
|Publisher||Association for Computing Machinery, Incacmhelp@acm.org|
|State||Published - Jul 17 2018|