Mid-infrared electroluminescence from coupled quantum dots and wells

P. A. Shields*, C. W. Bumby, L. J. Li, R. J. Nicholas

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The room temperature electroluminescence (EL) between 1.7-2.6 μ from coupled quantum dots and quantum wells in the InAs/InSb/GaSb materials system was investigated. The samples which were investigated consisted of a single narrow InAs quantum well grown below a layer of InSb quantum dots in a GaSb matrix. It was found that the thickness of the GaSb space layer lowers the energy from that of a quantum well alone. The results reveal the occurrence of a sharp transition after a single monolayer coverage of GaSb either due to structural changes in the quantum dots or from the shrinkage of the quantum well.

Original languageEnglish (US)
Pages (from-to)2725-2730
Number of pages6
JournalJournal of Applied Physics
Volume96
Issue number5
DOIs
StatePublished - Sep 1 2004
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Mid-infrared electroluminescence from coupled quantum dots and wells'. Together they form a unique fingerprint.

Cite this