Microdome InGaN-based multiple quantum well solar cells

Cheng Han Ho, Kun Yu Lai, Chin An Lin, Guan Jhong Lin, Meng Kai Hsing, Jr-Hau He*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

InGaN-based multiple quantum well (MQW) solar cells (SCs) employing the p-GaN microdome were demonstrated to significantly boost the conversion efficiency by 102. The improvements in short-circuit current density (J sc , from 0.43 to 0.54 mA/cm 2 ) and fill factor (from 44 to 72) using the p-GaN microdome are attributed to enhanced light absorption due to surface reflection suppression. The concept of microdome directly grown during SC epitaxial growth preserving mechanical robustness and wafer-scale uniformity proves a promising way in promoting the photovoltaic performances of SCs without any additional process.

Original languageEnglish (US)
Article number023902
JournalApplied Physics Letters
Volume101
Issue number2
DOIs
StatePublished - Jul 9 2012

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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