Micro-light-emitting diodes with III–nitride tunnel junction contacts grown by metalorganic chemical vapor deposition

David Hwang, Asad J. Mughal, Matthew S. Wong, Abdullah I. Alhassan, Shuji Nakamura, Steven P. DenBaars

Research output: Contribution to journalArticlepeer-review

42 Scopus citations

Abstract

Micro-light-emitting diodes (µLEDs) with tunnel junction (TJ) contacts were grown entirely by metalorganic chemical vapor deposition. A LED structure was grown, treated with UV ozone and hydrofluoric acid, and reloaded into the reactor for TJ regrowth. The silicon doping level of the n++-GaN TJ was varied to examine its effect on voltage. µLEDs from 2.5 × 10−5 to 0.01 mm2 in area were processed, and the voltage penalty of the TJ for the smallest µLED at 20 A/cm2 was 0.60 V relative to that for a standard LED with indium tin oxide. The peak external quantum efficiency of the TJ LED was 34%.
Original languageEnglish (US)
Pages (from-to)012102
JournalApplied Physics Express
Volume11
Issue number1
DOIs
StatePublished - Dec 13 2017
Externally publishedYes

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