Methods and devices for silicon integrated vertically aligned field effect transistors

Jingqi Li (Inventor)

Research output: Patent

Abstract

Embodiments of the present disclosure provide for vertically aligned CNTFET, methods of making vertically aligned CNTFET, methods of using vertically aligned CNTFET, and the like.
Original languageEnglish (US)
Patent numberUS9318718B2
StatePublished - Nov 19 2015

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