Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates

Guangyu Liu*, Jing Zhang, Xiaohang Li, G. S. Huang, Tanya Paskova, Keith R. Evans, Hongping Zhao, Nelson Tansu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

46 Scopus citations

Abstract

The epitaxy optimization studies of high-quality n-type AlInN alloys with different indium contents grown on two types of substrates by metalorganic vapor phase epitaxy (MOVPE) were carried out. The effect of growth pressure and V/III molar ratio on growth rate, indium content, and surface morphology of these MOVPE-grown AlInN thin films were examined. The surface morphologies of the samples were characterized by scanning electron microscopy and atomic force microscopy. By varying the growth temperatures from 860 °C to 750 °C, the indium contents in AlInN alloys were increased from 0.37% up to 21.4% as determined by X-ray diffraction (XRD) measurements. The optimization studies on the growth conditions for achieving nearly-lattice-matched AlInN on GaN templates residing on sapphire and free-standing GaN substrates were performed, and the results were analyzed in a comparative way. Several applications of AlInN alloy for thermoelectric and light-emitting diodes are also discussed.

Original languageEnglish (US)
Pages (from-to)66-73
Number of pages8
JournalJournal of Crystal Growth
Volume340
Issue number1
DOIs
StatePublished - Feb 1 2012

Keywords

  • A3. Metalorganic vapor phase epitaxy
  • B1. Nitrides
  • B2. Semiconducting IIIV materials
  • B3. Light emitting diodes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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