Metal wet-etch process development for dual metal gate CMOS using standard industry tools

Muhammad Mustafa Hussain*, Naim Moumen, Joel Barnett, Jason Saulters, David Baker, Mohammad Akbar, Zhibo Zhang

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

The development of wet-etch chemistries using standard fab chemicals and tools has been studied to successfully integrate dual work function metal gate CMOS. Candidate gate materials studied were TiN, Ta, TaN and TaSiN. Two hard mask materials, amorphous silicon (am-Si) and TEOS, and two gate dielectric films, Atomic Layer Deposition (ALD) HfO 2 and HfSi xO y, were also studied for their etch selectivity to various chemical formulations. In addition, some preliminary electrical results of devices processed using this wet-etch module have been reported here.

Original languageEnglish (US)
Pages188-197
Number of pages10
StatePublished - Dec 1 2005
Event207th ECS Meeting - Quebec, Canada
Duration: May 16 2005May 20 2005

Other

Other207th ECS Meeting
CountryCanada
CityQuebec
Period05/16/0505/20/05

ASJC Scopus subject areas

  • Engineering(all)

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