Metal wet etch issues and effects in dual metal gate stack integration

Muhammad Mustafa Hussain*, Naim Moumen, Zhibo Zhang, Baxter F. Womack

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

This article discusses metal wet etch issues and their effects on high- k /metal films in dual work function metal gate stack integration. A versatile process using metal wet etch has been demonstrated to integrate dual metal gate complementary metal oxide semiconductor (CMOS) devices (Z. B. Zhang, in 2005 Symposia on VLSI Technology and Circuits, Kyoto, Japan, June 14-18, 2000). Different high- k /metal films, combinations of films, etch selectivity, thermal stability, interactions among the films, and finally, surface conditions have made the implementation of metal wet etch challenging. Here, representative results using HfO2, HfSiON, in situ steam generated silicon oxide (SiO2), TiN, Ta, TaSiN, TaCN, TiSiN, amorphous silicon (a-Si), and tetraethylorthosilicate in dual metal CMOS processing are presented.

Original languageEnglish (US)
JournalJournal of the Electrochemical Society
Volume153
Issue number5
DOIs
StatePublished - 2006
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Materials Chemistry
  • Electrochemistry

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