TY - JOUR
T1 - Metal-Guided Selective Growth of 2D Materials: Demonstration of a Bottom-Up CMOS Inverter
AU - Chiu, Ming-Hui
AU - Tang, Hao-Ling
AU - Tseng, Chien-Chih
AU - Han, Yimo
AU - Aljarb, Areej
AU - Huang, Jing-Kai
AU - Wan, Yi
AU - Fu, Jui-Han
AU - Zhang, Xixiang
AU - Chang, Wen-Hao
AU - Muller, David A
AU - Takenobu, Taishi
AU - Tung, Vincent
AU - Li, Lain-Jong
N1 - KAUST Repository Item: Exported on 2020-04-23
Acknowledgements: M.-H.C. and H.-L.T. contributed equally to this work. V.T. and L.J.L. thank the support from KAUST (Saudi Arabia). W.H.C. acknowledges support from MOST of Taiwan (MOST-104-2628-M-009-002-MY3, MOST-105-2119-M-009-014-MY3) and the Center for Emergent Functional Matter Science (CEFMS) of NCTU. Y.H. and D.A.M. made use of the electron microscopy facility of the Cornell Center for Materials Research (CCMR) with support from the National Science Foundation (NSF) Materials Research Science and Engineering Centers (MRSEC) program (DMR-1120296) and NSF award 1429155. V.T. acknowledges the support from User Proposals (#4420 and #5067) at the Molecular Foundry, Lawrence Berkeley National Lab, supported by the Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. The authors also acknowledge the support from Nanofabrication Core Lab in KAUST.
PY - 2019/1/1
Y1 - 2019/1/1
N2 - 2D transition metal dichalcogenide (TMD) layered materials are promising for future electronic and optoelectronic applications. The realization of large-area electronics and circuits strongly relies on wafer-scale, selective growth of quality 2D TMDs. Here, a scalable method, namely, metal-guided selective growth (MGSG), is reported. The success of control over the transition-metal-precursor vapor pressure, the first concurrent growth of two dissimilar monolayer TMDs, is demonstrated in conjunction with lateral or vertical TMD heterojunctions at precisely desired locations over the entire wafer in a single chemical vapor deposition (VCD) process. Owing to the location selectivity, MGSG allows the growth of p- and n-type TMDs with spatial homogeneity and uniform electrical performance for circuit applications. As a demonstration, the first bottom-up complementary metal-oxide-semiconductor inverter based on p-type WSe2 and n-type MoSe2 is achieved, which exhibits a high and reproducible voltage gain of 23 with little dependence on position.
AB - 2D transition metal dichalcogenide (TMD) layered materials are promising for future electronic and optoelectronic applications. The realization of large-area electronics and circuits strongly relies on wafer-scale, selective growth of quality 2D TMDs. Here, a scalable method, namely, metal-guided selective growth (MGSG), is reported. The success of control over the transition-metal-precursor vapor pressure, the first concurrent growth of two dissimilar monolayer TMDs, is demonstrated in conjunction with lateral or vertical TMD heterojunctions at precisely desired locations over the entire wafer in a single chemical vapor deposition (VCD) process. Owing to the location selectivity, MGSG allows the growth of p- and n-type TMDs with spatial homogeneity and uniform electrical performance for circuit applications. As a demonstration, the first bottom-up complementary metal-oxide-semiconductor inverter based on p-type WSe2 and n-type MoSe2 is achieved, which exhibits a high and reproducible voltage gain of 23 with little dependence on position.
KW - 2D materials
KW - chemical vapor deposition
KW - heterojunctions
KW - molybdenum diselenide
KW - selective growth
KW - transition metal dichalcogenides
KW - tungsten diselenide
UR - http://hdl.handle.net/10754/652986
UR - https://onlinelibrary.wiley.com/doi/full/10.1002/adma.201900861
UR - http://www.scopus.com/inward/record.url?scp=85063397538&partnerID=8YFLogxK
U2 - 10.1002/adma.201900861
DO - 10.1002/adma.201900861
M3 - Article
C2 - 30907033
AN - SCOPUS:85063397538
VL - 31
SP - 1900861
JO - Advanced Materials
JF - Advanced Materials
SN - 0935-9648
IS - 18
ER -