Metal gate work function engineering using AlN x interfacial layers

Husam Niman Alshareef*, H. F. Luan, K. Choi, H. R. Harris, H. C. Wen, M. A. Quevedo-Lopez, P. Majhi, B. H. Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

57 Scopus citations

Abstract

Metal gate work function enhancement using thin AlN x interfacial layers has been evaluated. It was found that band edge effective work functions (∼5.10 eV) can be achieved on hafnium-based high dielectric constant (high-k) materials using the AlN x interfacial layer and TiSiN electrodes. It was also found that the effective work function enhancement by the AlN x interfacial layer increased when the concentration of SiO 2 in the gate dielectric was increased. Thus, the enhancement was minimal for HfO 2 and maximum for SiO 2. A model is proposed to explain these results and a bonding analysis is presented to support the proposed model.

Original languageEnglish (US)
Article number112114
JournalApplied Physics Letters
Volume88
Issue number11
DOIs
StatePublished - Mar 30 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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