Metal-free, single-polymer device exhibits resistive memory effect

Unnat Sampatraj Bhansali, Yasser Khan, Dong Kyu Cha, Mahmoud N. Almadhoun, Ruipeng Li, Long Chen, Aram Amassian, Ihab N. Odeh, Husam N. Alshareef

Research output: Contribution to journalArticlepeer-review

50 Scopus citations

Abstract

All-polymer, write-once-read-many times resistive memory devices have been fabricated on flexible substrates using a single polymer, poly(3,4- ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS). Spin-cast or inkjet-printed films of solvent-modified PEDOT:PSS are used as electrodes, while the unmodified or as-is PEDOT:PSS is used as the semiconducting active layer. The all-polymer devices exhibit an irreversible but stable transition from a low resistance state (ON) to a high resistance state (OFF) at low voltages caused by an electric-field-induced morphological rearrangement of PEDOT and PSS at the electrode interface. However, in the metal-PEDOT:PSS-metal devices, we have shown a metal filament formation switching the device from an initial high resistance state (OFF) to the low resistance state (ON). The all-PEDOT:PSS memory device has low write voltages (<3 V), high ON/OFF ratio (>10 3), good retention characteristics (>10 000 s), and stability in ambient storage (>3 months). © 2013 American Chemical Society.
Original languageEnglish (US)
Pages (from-to)10518-10524
Number of pages7
JournalACS Nano
Volume7
Issue number12
DOIs
StatePublished - Nov 14 2013

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Materials Science(all)
  • Engineering(all)

Fingerprint Dive into the research topics of 'Metal-free, single-polymer device exhibits resistive memory effect'. Together they form a unique fingerprint.

Cite this