Mesa-height Dependent Quantum Efficiency Characteristics of InGaN Micro-LEDs

Chao Shen, Chun Hong Kang, Tien Khee Ng, Boon S. Ooi

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    The mechanisms of mesa-height dependent efficiency and efficiency droop of blue InGaN/GaN micro-LED is presented. Device with a large etch-depth (> 1.3 µm) shows significant strain relief with aggravated current crowding.
    Original languageEnglish (US)
    Title of host publicationOSA Technical Digest (online)
    PublisherThe Optical Society
    ISBN (Print)978-1- 55752-989-3
    DOIs
    StatePublished - 2013

    Fingerprint Dive into the research topics of 'Mesa-height Dependent Quantum Efficiency Characteristics of InGaN Micro-LEDs'. Together they form a unique fingerprint.

    Cite this