Memristor-based relaxation oscillators using digital gates

Moustafa A. Khatib, Mohamed E. Fouda, Ahmed G. Mosad, Khaled N. Salama, Ahmed G. Radwan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Scopus citations

Abstract

This paper presents two memristor-based relaxation oscillators. The proposed oscillators are designed without the need of any reactive elements, i.e., capacitor or inductor. As the 'resistance storage' property of the memristor can be exploited to generate the oscillation. The proposed oscillators have the advantage that they can be fully integrated on-chip giving an area-efficient solution. Furthermore, these oscillators give higher frequency other than the existing reactance-less oscillator and provide a wider range of the resistance. The concept of operation and the mathematical analysis for the proposed oscillators are explained and verified with circuit simulations showing an excellent agreement. © 2012 IEEE.
Original languageEnglish (US)
Title of host publication2012 Seventh International Conference on Computer Engineering & Systems (ICCES)
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages98-102
Number of pages5
ISBN (Print)9781467329613
DOIs
StatePublished - Nov 2012

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