Mechanisms are provided for inhibiting precharging of memory cells of a dynamic random access memory (DRAM) structure. The mechanisms receive a command for accessing memory cells of the DRAM structure. The mechanisms further determine, based on the command, if precharging the memory cells following accessing the memory cells is to be inhibited. Moreover, the mechanisms send, in response to the determination indicating that precharging the memory cells is to be inhibited, a command to blocking logic of the DRAM structure to block precharging of the memory cells following accessing the memory cells.
|Original language||English (US)|
|IPC||G06F 12/ 00 A I|
|State||Published - Dec 1 2011|