MBE grown monocrystalline GaAs films on polycrystalline AlN thick films for power device applications

Y. Wang*, Leung Yee Wai, Hui Liu, Xixiang Zhang, Yuchun Chang, Hailin Luo, Liren Lou, Rong Chuan Fang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

A device-quality GaAs monocrystalline films were fabricated on AlN polycrystalline films. The X-ray characterization reveals that the (001) preferential orientated AlN thick films with very low stress can be grown by DC reactive sputtering. The photothermal deflection spectroscopic measurements of the GaAs-on-AlN composite material show that a reasonably high thermal conductivity can be obtained. Hall measurements and I-V characteristics of Schottky diodes show that the epi-GaAs films on AlN thick films have similar electric properties of bulk materials.

Original languageEnglish (US)
Pages (from-to)177-182
Number of pages6
JournalJournal of Crystal Growth
Volume227-228
DOIs
StatePublished - Jul 1 2001
Event11th International Conference on Molecular Beam Epitaxy - Bijing, China
Duration: Sep 11 2000Sep 15 2000

Keywords

  • A3. Polycrystalline deposition
  • B1. Nitrides
  • B2. Semiconducting gallium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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