Mathematical Modeling of Contact Resistance in Silicon Photovoltaic Cells

J. P. Black, C. J. W. Breward, P. D. Howell, R. J. S. Young

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

In screen-printed silicon-crystalline solar cells, the contact resistance of a thin interfacial glass layer between the silicon and the silver electrode plays a limiting role for electron transport. We analyze a simple model for electron transport across this layer, based on the driftdiffusion equations. We utilize the size of the current/Debye length to conduct asymptotic techniques to simplify the model; we solve the model numerically to find that the effective contact resistance may be a monotonic increasing, monotonic decreasing, or nonmonotonic function of the electron flux, depending on the values of the physical parameters. © 2013 Society for Industrial and Applied Mathematics.
Original languageEnglish (US)
Pages (from-to)1906-1925
Number of pages20
JournalSIAM Journal on Applied Mathematics
Volume73
Issue number5
DOIs
StatePublished - Oct 22 2013
Externally publishedYes

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