Manipulating the voltage dependence of tunneling spin torques

Aurelien Manchon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a direct impact on current-driven magnetization dynamics and on devices performances. After a brief overview of the progress made to date in the theoretical description of the spin torque in tunnel junctions, I present different ways to alter and control the bias dependence of both components of the spin torque. Engineering the junction (barrier and electrodes) structural asymmetries or controlling the spin accumulation profile in the free layer offer promising tools to design effcient spin devices.
Original languageEnglish (US)
Title of host publicationSpintronics V
PublisherSPIE-Intl Soc Optical Eng
ISBN (Print)9780819491787
DOIs
StatePublished - Oct 1 2012

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