Magnetoresistance of cylindrical nanowires with artificial pinning site

Enrique Vilanova Vidal, Mohammed H. Alanazy, I. Ivanov, Jürgen Kosel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

New concepts of magnetic memory devices are exploiting the movement of data bits by current induced domain wall motion. This concept has been widely explored with rectangular nanowires (NWs) or stripes both theoretically and experimentally [1]. In the case of cylindrical NWs not much progress has been made on the experimental side, despite its promising advantages like the absence of Walker breakdown [2].
Original languageEnglish (US)
Title of host publication2015 IEEE Magnetics Conference (INTERMAG)
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
ISBN (Print)9781479973224
DOIs
StatePublished - May 2015

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