Magnetoresistance in exchange-biased IrMn/NiFe/FeMn

Zaibing Guo*, J. J. Qiu, Y. K. Zheng, G. C. Han, K. B. Li, P. Luo, Y. H. Wu

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    Over the past few years, the influence of magnetic domain walls on transport properties has attracted great interest. In this paper, we fabricated a series of samples of IrMn(20nm)/NiFe(t nm)/FeMn(20nm) with t = 5, 10, 20, 50, and 80nm. The films were deposited under a magnetic field of 100Oe and then annealed at 250°C to induce the exchange bias of IrMn/NiFe and NiFe/FeMn parallel to each other. After that, the samples were annealed at 155°C under a reversed magnetic field of -1 Tesla, which reversed the exchange bias direction of NiFe/FeMn resulting in the exchange bias of NiFe/FeMn antiparallel to that of IrMn/NiFe.

    Original languageEnglish (US)
    Title of host publicationINTERMAG Europe 2002 - IEEE International Magnetics Conference
    EditorsJ. Fidler, B. Hillebrands, C. Ross, D. Weller, L. Folks, E. Hill, M. Vazquez Villalabeitia, J. A. Bain, Jo De Boeck, R. Wood
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Electronic)0780373650, 9780780373655
    DOIs
    StatePublished - Jan 1 2002
    Event2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 - Amsterdam, Netherlands
    Duration: Apr 28 2002May 2 2002

    Publication series

    NameINTERMAG Europe 2002 - IEEE International Magnetics Conference

    Other

    Other2002 IEEE International Magnetics Conference, INTERMAG Europe 2002
    CountryNetherlands
    CityAmsterdam
    Period04/28/0205/2/02

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering
    • Surfaces, Coatings and Films

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