Magnetic Sensitivity Distribution of Hall Devices in Antiferromagnetic Switching Experiments

F. Schreiber, H. Meer, C. Schmitt, R. Ramos, E. Saitoh, L. Baldrati, Mathias Kläui

Research output: Contribution to journalArticlepeer-review

Abstract

We analyze the complex impact of the local magnetic spin texture on the transverse Hall-type voltage in device structures utilized to measure magnetoresistance effects. We find a highly localized and asymmetric magnetic sensitivity in the eight-terminal geometries that are frequently used in current-induced switching experiments, for instance, to probe antiferromagnetic materials. Using current-induced switching of antiferromagnetic NiO/Pt as an example, we estimate the change in the spin Hall magnetoresistance signal associated with switching events based on the domain-switching patterns observed via direct imaging. This estimate correlates with the actual electrical data after subtraction of a nonmagnetic contribution. Here, the consistency of the correlation across three measurement geometries with fundamentally different switching patterns strongly indicates a magnetic origin of the measured and analyzed electrical signals.
Original languageEnglish (US)
JournalPhysical Review Applied
Volume16
Issue number6
DOIs
StatePublished - Dec 9 2021
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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