Magnetic random access memory (MRAM)

Yuankai Zheng*, Yihong Wu, Kebin Li, Jinjun Qiu, Guchang Han, Zaibing Guo, Ping Luo, Lihua An, Zhiyong Liu, Li Wang, Seng Ghee Tan, Baoyu Zong, Bo Liu

*Corresponding author for this work

    Research output: Contribution to journalReview articlepeer-review

    22 Scopus citations

    Abstract

    The high density and high speed nonvolatile MTJ MRAMs are reviewed from perspective of the reading and writing operation. The reading operation of the MRAM with different sensing schemes and cell array structures is discussed, in particular the reference resistance generating schemes which are introduced to maximize the cell efficiency and reading reliability. The high density, low cost cross-point cell layout structures are analyzed systematically. The writing operation modes ranging from the half-select, toggle mode, guided SAF direct writing, thermally assisted writing, to the spin transfer switching are investigated both theoretically and experimentally. The thermal factor always plays an important role in determine not only the thermal stability but also the reading and writing reliability.

    Original languageEnglish (US)
    Pages (from-to)117-137
    Number of pages21
    JournalJournal of Nanoscience and Nanotechnology
    Volume7
    Issue number1
    DOIs
    StatePublished - Jan 1 2007

    Keywords

    • Cross-Point MRAM
    • Giant Magneto-Resistive
    • Magnetic Random Access Memory
    • Magnetic Tunnel Junction
    • Spin Transfer Switching
    • Synthetic Antiferromagnet
    • Thermal Factor
    • Thermally Assisted MRAM
    • Toggle MRAM

    ASJC Scopus subject areas

    • Bioengineering
    • Chemistry(all)
    • Biomedical Engineering
    • Materials Science(all)
    • Condensed Matter Physics

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