Magnetic property and magnetoresistance in Fe/ITO multilayers

Tian Yu, Xing Qing Li, Ding Guo Li, Shen Fen Hao, Liang Min Wang, Zhao Gang Zhang, G. H. Wu, Xixiang Zhang, Qi Ling Li, Peng Chen*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Giant magnetoresistance was found in DC magnetron sputtering Fe/ITO multilayers. The magnetic properties, electrical properties and magnetoresistance were investigated. A critical temperature is found around 50 K where the temperature dependence of resistivity and magnetoresistance ratio exhibit an abruptly change. The temperature dependence of resistance is found to obey Mott's 1/4 law for low temperature. The max magnetoresistance ratio of 2.0% and 6.7% is found at room temperature and 12.5 K, respectively. The increase of magnetoresistance ratio at low temperature is due to the decrease of spin-mixing effect.

Original languageEnglish (US)
Pages (from-to)2185-2189
Number of pages5
JournalJournal of Magnetism and Magnetic Materials
Volume320
Issue number17
DOIs
StatePublished - Sep 1 2008

Keywords

  • Ferromagnetic metal-semiconductor
  • Giant magnetoresistance
  • Magnetic properties
  • Multilayer film

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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