Magnetic properties in patterned FeMn/NiFe bilayers with different etching depth

Zaibing Guo*, K. B. Li, G. C. Han, Z. Y. Liu, P. Luo, Y. H. Wu

*Corresponding author for this work

    Research output: Contribution to journalConference articlepeer-review

    Abstract

    Magnetic properties in patterned FeMn/NiFe bilayers with different etching depth were analyzed. The detailed studies of exchange bias and magnetization reversal behaviors in the patterned sample with 3.5nm thick FeMn layer left in etched areas were performed. The origin of the phenomenon was attributed to the presence of antiferromagnetic domain walls by magnetization reversal in patterned sample.

    Original languageEnglish (US)
    JournalDigests of the Intermag Conference
    StatePublished - Dec 1 2002
    Event2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG - Amsterdam, Netherlands
    Duration: Apr 28 2002May 2 2002

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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