Magnetic properties in patterned FeMn/NiFe bilayers with different etching depth were analyzed. The detailed studies of exchange bias and magnetization reversal behaviors in the patterned sample with 3.5nm thick FeMn layer left in etched areas were performed. The origin of the phenomenon was attributed to the presence of antiferromagnetic domain walls by magnetization reversal in patterned sample.
|Original language||English (US)|
|Journal||Digests of the Intermag Conference|
|State||Published - Dec 1 2002|
|Event||2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG - Amsterdam, Netherlands|
Duration: Apr 28 2002 → May 2 2002
ASJC Scopus subject areas
- Electrical and Electronic Engineering