Magnetic properties in patterned FeMn/NiFe bilayers with different etching depth

Zaibing Guo*, K. B. Li, G. C. Han, Z. Y. Liu, P. Luo, Y. H. Wu

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    Recently, much attention has been focused on exchange coupling between a ferromagnetic layer and an antiferromagnetic layer, because of its elusive mechanism and its applications in spin-valve devices. For FeMn(22 nm)/NiFe(20 nm) bilayers, using electron beam lithography and ion beam etching, a wire-like array has been patterned in the FeMn layer by partially etching the FeMn layer. The authors present a scanning electron microscope image and study the magnetic properties of a wire-like array patterned sample.

    Original languageEnglish (US)
    Title of host publicationINTERMAG Europe 2002 - IEEE International Magnetics Conference
    EditorsJ. Fidler, B. Hillebrands, C. Ross, D. Weller, L. Folks, E. Hill, M. Vazquez Villalabeitia, J. A. Bain, Jo De Boeck, R. Wood
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Electronic)0780373650, 9780780373655
    DOIs
    StatePublished - Jan 1 2002
    Event2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 - Amsterdam, Netherlands
    Duration: Apr 28 2002May 2 2002

    Publication series

    NameINTERMAG Europe 2002 - IEEE International Magnetics Conference

    Other

    Other2002 IEEE International Magnetics Conference, INTERMAG Europe 2002
    CountryNetherlands
    CityAmsterdam
    Period04/28/0205/2/02

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering
    • Surfaces, Coatings and Films

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