Magnetic doping and characterization of n-type GaN

X. M. Cai*, A. B. Djurišić, M. H. Xie, H. Liu, X. X. Zhang, J. J. Zhu, H. Yang, Y. H. Leung

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

n-type GaN films grown on sapphire by MOCVD were doped with Mn and Cr by solid state diffusion and characterized by various methods. Hall measurement shows that the samples still remain n-type after the diffusion. Secondary Ion Mass Spectroscopy (SIMS) results show a good diffusion of Mn and Cr inside GaN. X-ray diffraction (XRD) reveals no secondary phases in the samples. Superconducting quantum interference device (SQUID) results show that the samples are ferromagnetic up to room temperature. The possible origin of ferromagnetism is discussed.

Original languageEnglish (US)
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages319-320
Number of pages2
DOIs
StatePublished - Jun 30 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: Jul 26 2004Jul 30 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period07/26/0407/30/04

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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