Magnetic and transport properties of Ge: MMMn granular system

Hongliang Li, Yihong Wu*, Tie Liu, Shijie Wang, Zaibing Guo, Thomas Osipowicz

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    9 Scopus citations

    Abstract

    Ge : Mn granular thin films were fabricated on semi-insulating GaAs(001) substrates by molecular beam epitaxy. Transmission electron microscopy and Raman study showed that the sample has a granular structure consisting of GeMn crystallites in a Ge polycrystalline host matrix. A Curie temperature of ∼ 300 K was observed in the magnetization measurement, suggesting that the granules are Mn5Ge3. The granular nature of the material was also revealed clearly in the differential conductance vs. bias voltage curves. The unique conductance versus bias voltage curve suggests that the electrical transport is determined by Schottky barriers at the nanoparticle/host matrix interface. This type of material might be useful for studying spin-injections from metallic magnetic nanostructures to semiconductors.

    Original languageEnglish (US)
    Pages (from-to)54-56
    Number of pages3
    JournalThin Solid Films
    Volume505
    Issue number1-2
    DOIs
    StatePublished - May 18 2006

    Keywords

    • Diluted magnetic semiconductors (DMSs)
    • Granular systems
    • Localization
    • Schottky barrier

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films
    • Metals and Alloys
    • Materials Chemistry

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