Magnetic and spin-dependent transport properties of reactive sputtered epitaxial Ti 1-xCr xN films

Xiaofei Duan, Wenbo Mi, Zaibing Guo, Haili Bai

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Reactive-sputtered epitaxial Ti 1-xCr xN films are ferromagnetic in the range of 0.17 ≤ x ≤ 0.51 due to the Cr-N-Cr double-exchange interaction below the Curie temperature (T C). The T C first increases, then decreases as x increases, and a maximum of 120 K appears at x = 0.47. All of the films are metallic with a transition near T C. A resistivity minimum ρ min is observed below 60 K in the films with 0.10 ≤ x ≤ 0.51 due to the effects of the weak localization and electron-electron interaction. The negative magnetoresistance (MR) is caused by the double-exchange interaction below T C and the weak localization can also contribute to MR below T min where ρ min appears. The x-dependent electron carrier densities reveal that the ferromagnetism is not from the carrier-mediated mechanism. The anomalous Hall resistivity follows the relation of ρxyA∝ρxx2, which is from the side-jump mechanism. © 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
Original languageEnglish (US)
Pages (from-to)3690-3697
Number of pages8
JournalActa Materialia
Volume60
Issue number9
DOIs
StatePublished - May 2012

ASJC Scopus subject areas

  • Polymers and Plastics
  • Metals and Alloys
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

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