Mach-Zehnder modulators monolithically integrated with Fabry-Perot laser diodes in GaAs/AlGaAs using impurity-free vacancy disordering

A. Saher Helmy*, B. S. Ooi, F. Camacho, A. C. Bryce, J. S. Aitchison, R. M. de la Rue, J. H. Marsh

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A Mach-Zehnder interferometer was realized in GaAs/AlGaAs double quantum well (DQW) p-1-n semiconductor structure, integrated with Fabry-Perot lasers on the same chip. The laser facet on the modulator side was etched facet. The modulator was tested using a Ti:sapphire laser at different wavelengths. Away from the bandgap, a figure of merit of 75°.V-1.mm-1 was obtained. Closer to the modulator bandgap, the switching contrast was around 1 dB.

Original languageEnglish (US)
Title of host publicationConference on Lasers and Electro-Optics Europe - Technical Digest
PublisherIEEE
Pages19
Number of pages1
StatePublished - 1998
Externally publishedYes
EventProceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98 - Glasgow, Scotland
Duration: Sep 14 1998Sep 18 1998

Other

OtherProceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98
CityGlasgow, Scotland
Period09/14/9809/18/98

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Mach-Zehnder modulators monolithically integrated with Fabry-Perot laser diodes in GaAs/AlGaAs using impurity-free vacancy disordering'. Together they form a unique fingerprint.

Cite this