Luminescence spectroscopy of Eu-implanted zincblende GaN

Iman Roqan*, K. P. O'Donnell, C. Trager-Cowan, B. Hourahine, R. W. Martin, K. Lorenz, E. Alves, D. J. As, M. Panfilova, I. M. Watson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Cathodoluminescence (CL) and Photoluminescence (PL) of Eu-implanted zincblende-GaN (ZB-GaN:Eu) and wurtzite-GaN (W-GaN:Eu) are compared in order to investigate the optical activation of GaN by Eu. The Eu3+ emission spectrum depends critically on the crystal structure of the GaN host; implantation and post-annealing at 800°C partially converts implantation-damaged ZB-GaN:Eu to W-GaN:Eu. Selective excitation of PL at wavelengths below the ZB-GaN band edge reveals a new sharp emission line at 627 nm, together with a number of satellites, which we ascribe to ZB-GaN:Eu.

Original languageEnglish (US)
Pages (from-to)170-173
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume245
Issue number1
DOIs
StatePublished - Jan 1 2008

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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