Low-voltage organic transistors based on solution processed semiconductors and self-assembled monolayer gate dielectrics

Paul H. Wöbkenberg, James Ball, Floris B. Kooistra, Jan C. Hummelen, Dago M. De Leeuw, Donal D.C. Bradley, Thomas D. Anthopoulos

Research output: Contribution to journalArticlepeer-review

104 Scopus citations

Abstract

Reduction in the operating voltage of organic transistors is of high importance for successful implementation in low-power electronic applications. Here we report on low-voltage n -channel transistors fabricated employing a combination of soluble organic semiconductors and a self-assembled gate dielectric. The high geometric capacitance of the nanodielectric allows transistor operation below 2 V. Solution processing is enabled by analysis of the surface energy compatibility of the dielectric and semiconductor solutions. Electron mobilities in the range of 0.01-0.04 cm2 V s and threshold voltages ≤0.35 V are demonstrated. The present work paves the way toward solution processable low-voltage/power, organic complementary circuits.

Original languageEnglish (US)
Article number013303
JournalApplied Physics Letters
Volume93
Issue number1
DOIs
StatePublished - Jul 21 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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