Solution-processed metal oxide thin-film transistors (TFTs) represent a promising technology for applications in existing but also emerging large-area electronics. However, high process temperatures and lengthy annealing times represent two remaining technical challenges. Different approaches aiming to address these challenges have been proposed but progress remains modest. Here, the development of high electron mobility metal oxide TFTs based on photonically converted Al2O3/ZrO2 and In2O3/ZnO bilayers acting as the high-k dielectric and electron-transporting channel, respectively is described. Sequential solution-phase deposition and photonic processing lead to low substrate temperature (106), and low subthreshold swing (108 mV dec−1), that can be manufactured even onto thermally sensitive polymer substrates. The work is a significant step toward all-photonic processed metal oxide electronics.