Low-voltage graphene transistors based on self-assembled monolayer nanodielectrics

Cecilia Mattevi; Florian Colléaux; Hokwon Kim; Manish Chhowalla; Thomas Anthopoulos

doi:10.1557/opl.2012.1042

Low-voltage graphene transistors based on self-assembled monolayer nanodielectrics

Cecilia Mattevi^*, Florian Colléaux, Hokwon Kim, Manish Chhowalla, Thomas Anthopoulos

^*Corresponding author for this work

Physical Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We demonstrate low operating voltage (<|1.5|V) chemical vapour deposited (CVD) graphene transistors using solution processable organic self-assembled monolayers (SAMs) as nanodielectrics. The transistors show weak extrinsic doping, hysteresis-free operation, low gate-leakage current and good operating stability with bias-stress free characteristics. Most importantly we demonstrate that the Dirac potential can be finely tuned by modifying the molecular end-group of the SAMs without compromising the electrical characteristics of the transistors.

Original language	English (US)
Title of host publication	Nanocarbon Materials and Devices
Pages	179-184
Number of pages	6
DOIs	https://doi.org/10.1557/opl.2012.1042
State	Published - Jan 1 2013
Event	2012 MRS Spring Meeting - San Francisco, CA, United States Duration: Apr 9 2012 → Apr 13 2012

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1451
ISSN (Print)	0272-9172

Other

Other	2012 MRS Spring Meeting
Country	United States
City	San Francisco, CA
Period	04/9/12 → 04/13/12

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Low-voltage graphene transistors based on self-assembled monolayer nanodielectrics",

abstract = "We demonstrate low operating voltage (<|1.5|V) chemical vapour deposited (CVD) graphene transistors using solution processable organic self-assembled monolayers (SAMs) as nanodielectrics. The transistors show weak extrinsic doping, hysteresis-free operation, low gate-leakage current and good operating stability with bias-stress free characteristics. Most importantly we demonstrate that the Dirac potential can be finely tuned by modifying the molecular end-group of the SAMs without compromising the electrical characteristics of the transistors.",

author = "Cecilia Mattevi and Florian Coll{\'e}aux and Hokwon Kim and Manish Chhowalla and Thomas Anthopoulos",

year = "2013",

month = jan,

day = "1",

doi = "10.1557/opl.2012.1042",

language = "English (US)",

isbn = "9781605114286",

series = "Materials Research Society Symposium Proceedings",

pages = "179--184",

booktitle = "Nanocarbon Materials and Devices",

note = "2012 MRS Spring Meeting ; Conference date: 09-04-2012 Through 13-04-2012",

}

Mattevi, C, Colléaux, F, Kim, H, Chhowalla, M & Anthopoulos, T 2013, Low-voltage graphene transistors based on self-assembled monolayer nanodielectrics. in Nanocarbon Materials and Devices. Materials Research Society Symposium Proceedings, vol. 1451, pp. 179-184, 2012 MRS Spring Meeting, San Francisco, CA, United States, 04/9/12. https://doi.org/10.1557/opl.2012.1042

Low-voltage graphene transistors based on self-assembled monolayer nanodielectrics. / Mattevi, Cecilia; Colléaux, Florian; Kim, Hokwon; Chhowalla, Manish; Anthopoulos, Thomas.

Nanocarbon Materials and Devices. 2013. p. 179-184 (Materials Research Society Symposium Proceedings; Vol. 1451).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Low-voltage graphene transistors based on self-assembled monolayer nanodielectrics

AU - Mattevi, Cecilia

AU - Colléaux, Florian

AU - Kim, Hokwon

AU - Chhowalla, Manish

AU - Anthopoulos, Thomas

PY - 2013/1/1

Y1 - 2013/1/1

N2 - We demonstrate low operating voltage (<|1.5|V) chemical vapour deposited (CVD) graphene transistors using solution processable organic self-assembled monolayers (SAMs) as nanodielectrics. The transistors show weak extrinsic doping, hysteresis-free operation, low gate-leakage current and good operating stability with bias-stress free characteristics. Most importantly we demonstrate that the Dirac potential can be finely tuned by modifying the molecular end-group of the SAMs without compromising the electrical characteristics of the transistors.

AB - We demonstrate low operating voltage (<|1.5|V) chemical vapour deposited (CVD) graphene transistors using solution processable organic self-assembled monolayers (SAMs) as nanodielectrics. The transistors show weak extrinsic doping, hysteresis-free operation, low gate-leakage current and good operating stability with bias-stress free characteristics. Most importantly we demonstrate that the Dirac potential can be finely tuned by modifying the molecular end-group of the SAMs without compromising the electrical characteristics of the transistors.

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U2 - 10.1557/opl.2012.1042

DO - 10.1557/opl.2012.1042

M3 - Conference contribution

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T3 - Materials Research Society Symposium Proceedings

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BT - Nanocarbon Materials and Devices

T2 - 2012 MRS Spring Meeting

Y2 - 9 April 2012 through 13 April 2012

ER -

Low-voltage graphene transistors based on self-assembled monolayer nanodielectrics

Abstract

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Other

ASJC Scopus subject areas

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