Low temperature inorganic chemical vapor deposition of Ti-Si-N diffusion barrier liners for gigascale copper interconnect applications

Eric Eisenbraun*, Allan Upham, Raj Dash, Wanxue Zeng, Johann Hoefnagels, Sarah Lane, Dalaver Anjum, Katharine Dovidenko, Alain Kaloyeros, Barry Arkles, John J. Sullivan

*Corresponding author for this work

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