Low temperature ferromagnetism of GaMnN grown on 6H-SiC (0001) by molecular beam epitaxy

X. M. Cai, A. B. Djurišić, M. H. Xie, H. Liu, Xixiang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

GaMnN films with ∼3 at. % Mn were grown on 6H SiC (0001) by plasma-assisted molecular beam epitaxy (MBE). The samples were characterized by X-ray diffraction (XRD), photoluminescence (PL), and superconducting quantum interference device (SQUID). The samples exhibited ferromagnetic properties at low temperature. The highest obtained Curie temperature Tc was 56K. The origin of the ferromagnetic properties was discussed.

Original languageEnglish (US)
Title of host publicationCOMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings
Pages49-52
Number of pages4
DOIs
StatePublished - Dec 1 2005
EventCOMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices - Bribane, QLD, Australia
Duration: Dec 8 2004Dec 10 2004

Publication series

NameConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Other

OtherCOMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices
CountryAustralia
CityBribane, QLD
Period12/8/0412/10/04

Keywords

  • Curie temperature
  • Ferromagnetism
  • GaMnN

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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