Low switching current flux-closed magnetoresistive random access memory

Y. K. Zheng*, Y. H. Wu, K. B. Li, J. J. Qiu, Y. T. Shen, L. H. An, Zaibing Guo, G. C. Han, P. Luo, D. You, Z. Y. Liu

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    9 Scopus citations

    Abstract

    Low switching current flux-closed magnetoresistive random access memory was analyzed. It was found that the switching field increases under the uniform external field, and the switching field has no change under the bit current field. Results showed that the bit current of 10 mA was sufficient to switch the 1 μm×4 μm cell.

    Original languageEnglish (US)
    Pages (from-to)7307-7309
    Number of pages3
    JournalJournal of Applied Physics
    Volume93
    Issue number10 2
    DOIs
    StatePublished - May 15 2003

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    Fingerprint Dive into the research topics of 'Low switching current flux-closed magnetoresistive random access memory'. Together they form a unique fingerprint.

    Cite this