Chlorine-doped ZnSe on (100)GaAs has been grown by molecular Beam epitaxy. The Cl-doped ZnSe layer exhibited extremely low resistivity and high carrier concentration compared with Ga-doped ZnSe. Strong blue near-band-gap photoluminescence at room temperature was observed for an appropriate doping level. It was found by SIMS analysis that the diffusion of Cl atoms in the ZnSe layer during growth was negligible.
|Original language||English (US)|
|Title of host publication||Conference on Solid State Devices and Materials|
|Publisher||Business Cent for Academic Soc Japan|
|Number of pages||4|
|State||Published - 1986|
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