LOW-RESISTIVITY Cl-DOPED ZnSe LAYERS GROWN BY MOLECULAR BEAM EPITAXY.

K. Ohkawa*, T. Mitsuyu, O. Yamazaki

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

16 Scopus citations

Abstract

Chlorine-doped ZnSe on (100)GaAs has been grown by molecular Beam epitaxy. The Cl-doped ZnSe layer exhibited extremely low resistivity and high carrier concentration compared with Ga-doped ZnSe. Strong blue near-band-gap photoluminescence at room temperature was observed for an appropriate doping level. It was found by SIMS analysis that the diffusion of Cl atoms in the ZnSe layer during growth was negligible.

Original languageEnglish (US)
Title of host publicationConference on Solid State Devices and Materials
PublisherBusiness Cent for Academic Soc Japan
Pages635-638
Number of pages4
ISBN (Print)493081314X
StatePublished - 1986
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)

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