Low operation voltage transparent resistive random access memory (T-RRAM) based on ultrathin a-TiOx films and its resistive switching characteristics

Yi Jen Huang, I. Chung Shih, Shih Chun Chao, Cheng Yen Wen, Jr-Hau He, Si Chen Lee

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A fully transparent resistive random access memory (T-RRAM) device based on an ultrathin a-TiOx storage layer sandwiched between the top ITO and bottom FTO electrodes (ITO/a-TiOx/FTO) was fabricated on the glass substrate. The memory device exhibited not only good optical transmittance (∼80%) but also a bipolar resistive switching characteristic with low operation voltage (-0.5V/+1V), low operation current (500μA), high ROFF/RON ratio (>100), reasonable endurance (>102 cycles), and retention characteristics (104 s). The resistive switching mechanism could be explained by the formation and rupture of the oxygen vacancies induced conductive filament near ITO and a-TiOx interface. Our devices demonstrated the great potential for future transparent electronic applications.

Original languageEnglish (US)
Title of host publication2014 IEEE International Nanoelectronics Conference, INEC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479950379
DOIs
StatePublished - Apr 26 2016
EventIEEE International Nanoelectronics Conference, INEC 2014 - Sapporo, Japan
Duration: Jul 28 2014Jul 31 2014

Publication series

Name2014 IEEE International Nanoelectronics Conference, INEC 2014

Conference

ConferenceIEEE International Nanoelectronics Conference, INEC 2014
CountryJapan
CitySapporo
Period07/28/1407/31/14

Keywords

  • ALD
  • T-RRAM
  • a-TiO

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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