Low modulation bias InGaN-based integrated EA-modulator-laser on semipolar GaN substrate

Chao Shen, John Leonard, Arash Pourhashemi, Hassan M. Oubei, Mohd Sharizal Alias, Tien Khee Ng, Shuji Nakamura, Steven P. DenBaars, James S. Speck, Ahmed Y. Alyamani, Munir M. Eldesouki, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

In summary, we demonstrated the monolithic integration of electroabsorption modulator with laser diode and measured DC and AC modulation characteristics of the device, which is grown on (2021̅) plane GaN substrate. By alternating the modulation voltage at −3.5 V and 0 V, we achieve the laser output power of < 1.5 mW to > 9 mW, respectively, leading to ∼8.1 dB On/Off ratio. Our results clearly show that a low power consumption modulator can be achieved with semipolar EA-modulator compared to that of the c-plane devices.
Original languageEnglish (US)
Title of host publication2015 IEEE Photonics Conference (IPC)
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages581-582
Number of pages2
ISBN (Print)9781479974658
DOIs
StatePublished - Nov 12 2015

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