Low-loss monolithic extended cavity laser by low-energy ion-implantation induced intermixing

Y. Wang*, H. S. Djie, Boon Ooi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The fabrication and characterisation of a monolithic extended cavity ridge laser using low-energy ion-implantation induced quantum well intermixing on InGaAs/InGaAsP quantum-well structure are presented. An extremely low propagation loss of 2cm-1 in the passive waveguide section has been measured.

Original languageEnglish (US)
Pages (from-to)699-701
Number of pages3
JournalElectronics Letters
Volume42
Issue number12
DOIs
StatePublished - Jun 20 2006

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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