Low internal loss GaInNAs laser diode with InGaAs/GaNAs/GaAs barrier

F. Maskuriy*, Mohd Sharizal Bin Alias, S. M. Mitani, A. A. Manaf

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We investigate the performance of GaInNAs broad area laser diode at room temperature when the InGaAs and GaNAs barrier configuration is applied to the quantum well system in the active region. The simulation software PICS3D is used in this work. By plotting the light versus the current curve, we can extract the differential quantum efficiency, d and internal quantum efficiency, i for the laser. The internal loss of the laser is then determined by plotting the slope of the linear fit line to the inverse of external differential quantum efficiency versus cavity length data points. The inverse slope of the efficiency versus cavity length plot shows that the laser exhibits low internal loss of 2.8cm 1 with i of 58%. This shows good simulation result of GaInNAs laser diode.

Original languageEnglish (US)
Title of host publicationConference Proceedings - 2011 IEEE 2nd International Conference on Photonics, ICP 2011
DOIs
StatePublished - Dec 1 2011
Event2011 IEEE 2nd International Conference on Photonics, ICP 2011 - Kota Kinabalu, Sabah, Malaysia
Duration: Oct 17 2011Oct 19 2011

Publication series

NameConference Proceedings - 2011 IEEE 2nd International Conference on Photonics, ICP 2011

Other

Other2011 IEEE 2nd International Conference on Photonics, ICP 2011
CountryMalaysia
CityKota Kinabalu, Sabah
Period10/17/1110/19/11

Keywords

  • GaInNAs
  • long wavelength lasers
  • quantum well

ASJC Scopus subject areas

  • Condensed Matter Physics

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