Low-density self-assembled InGaAs QDs grown directly in a GaAs matrix for quantum-communication applications at 1300 nm wavelength

M. T. Todaro*, V. Tasco, M. De Giorgi, M. De Vittorio, R. Cingolani, A. Passaseo, F. Romanato, Enzo Di Fabrizio

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

In this work we report on the morphological and optical properties of low-density self-assembled InGaAs quantum dots (QDs), suitable for quantum communication applications. The QDs are grown directly into a GaAs matrix by Stranski-Krastanov metal organic chemical vapour deposition, and emit at 1300 nm at room-temperature. We have studied the influence of the deposition rate on the morphological properties of the dots in order to obtain reproducible low-density samples. After the optimization of the growth conditions, we have fabricated, processed and preliminarily characterized a QD light-emitting diode, operating at 1300 nm, based on QDs with a density as low as 109 cm-2.

Original languageEnglish (US)
Pages (from-to)757-761
Number of pages5
JournalMicroelectronic Engineering
Volume73-74
DOIs
StatePublished - Jan 1 2004
EventMicro and Nano Engineering 2003 - Cambridge, United Kingdom
Duration: Sep 22 2003Sep 25 2003

Keywords

  • 1300 nm
  • InGaAs/GaAs
  • Low-density
  • Quantum dots

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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