Low damage reactive ion etching process for fabrication of ridge waveguide lasers

B. C. Qiu*, B. S. Ooi, A. C. Bryce, S. E. Hicks, C. D W Wilkinson, R. M. De La Rue, J. H. Marsh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

The depth of the damage introduced by CH4/H2 RIE as a function of plasma power was measured. It was found to lie in the range 300 angstroms to 700 angstroms when the etching power was varied from 20 W to 100 W. A post etch anneal at 500 °C for 60 s, removed most of the damage. During this process point defects propagated into the epilayer causing quantum well intermixing in the deeper wells. A comparison of quantum well lasers fabricated by the RIE process with lasers fabricated using wet etching showed that the damage does not significantly affect the laser qualities provided a relatively low power etch process and post-dry-etch annealing were used.

Original languageEnglish (US)
Pages (from-to)578-581
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
StatePublished - 1997
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

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