The depth of the damage introduced by CH4/H2 RIE as a function of plasma power was measured. It was found to lie in the range 300 angstroms to 700 angstroms when the etching power was varied from 20 W to 100 W. A post etch anneal at 500 °C for 60 s, removed most of the damage. During this process point defects propagated into the epilayer causing quantum well intermixing in the deeper wells. A comparison of quantum well lasers fabricated by the RIE process with lasers fabricated using wet etching showed that the damage does not significantly affect the laser qualities provided a relatively low power etch process and post-dry-etch annealing were used.
|Original language||English (US)|
|Number of pages||4|
|Journal||Conference Proceedings - International Conference on Indium Phosphide and Related Materials|
|State||Published - 1997|
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)