Low damage and low surface roughness GaInP etching in Cl2/Ar electron cyclotron resonance process

S. F. Yoon*, Tien Khee Ng, H. Q. Zheng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Low damage and low surface roughness conditions for GaInP lattice matched to GaAs were obtained by electron cyclotron resonance Cl2/Ar plasma etching characterization. The near-surface quality and etch rate of GaInP was characterized using micro-Raman spectroscopy, atomic force microscopy (AFM) and surface profiling. It was observed that near-surface damage increased with dc self-bias voltage in both Ar and Cl2/Ar plasmas.

Original languageEnglish (US)
Pages (from-to)1775-1781
Number of pages7
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume19
Issue number5
DOIs
StatePublished - Sep 1 2001

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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