Low damage and low surface roughness conditions for GaInP lattice matched to GaAs were obtained by electron cyclotron resonance Cl2/Ar plasma etching characterization. The near-surface quality and etch rate of GaInP was characterized using micro-Raman spectroscopy, atomic force microscopy (AFM) and surface profiling. It was observed that near-surface damage increased with dc self-bias voltage in both Ar and Cl2/Ar plasmas.
|Original language||English (US)|
|Number of pages||7|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Sep 1 2001|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering