Long-wavelength MBE grown GaInNAs quantum well laser emitting at 1270 nm

Mohd Sharizal Bin Alias*, F. Maskuriy, S. M. Mitani

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

In this paper, we report on comprehensive theoretical optical properties analysis and experimental device electrical-optical characterization of long wavelength GaInNAs edge-emitting laser diode. The theoretical analysis demonstrates that a high quality GaInNAs active region and device design are devised, where high material gain near 1.3 μm and optimal optical mode confinement are calculated. Experimentally, room temperature lasing emission around 1.27 μm with threshold current densities of 670-810 A/cm 2 is obtained from the fabricated broad area GaInNAs edge-emitting laser grown by molecular beam epitaxy technique.

Original languageEnglish (US)
Pages (from-to)155-159
Number of pages5
JournalLaser Physics
Volume22
Issue number1
DOIs
StatePublished - Jan 1 2012

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Instrumentation
  • Condensed Matter Physics
  • Industrial and Manufacturing Engineering

Fingerprint Dive into the research topics of 'Long-wavelength MBE grown GaInNAs quantum well laser emitting at 1270 nm'. Together they form a unique fingerprint.

Cite this