Localization of excitons in pairs of natural dots induced by stacking faults in ZnSe quantum wells

D. Lüerssen, R. Bleher, H. Kalt, H. Richter, Th Schimmel, A. Rosenauer, D. Litvinov, A. Kamilli, D. Gerthsen, B. Johst, Kazuhiro Ohkawa, D. Hommel

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

Pairs of bright spots aligned parallel to the cleaved sample edges are observed in micro-photoluminescence intensity maps of ZnSe/ZnMgSSe quantum-well structures. Structural characterization by atomic-force microscopy, plan-view and cross-section transmission electron microscopy reveal that the enhanced radiative recombination is induced by pairs of stacking faults intersecting the quantum wells. In the case of Frank-type stacking faults the wells are enlarged by up to 12 bilayers leading to an efficient exciton localization. This localization is much shallower in the case of Shockley-type stacking-fault pairs.

Original languageEnglish (US)
Pages (from-to)189-192
Number of pages4
JournalPhysica Status Solidi (A) Applied Research
Volume178
Issue number1
DOIs
StatePublished - Mar 1 2000
EventOptics of Excitons in Confined Systems (OECS-6) - Ascona, Switz
Duration: Aug 30 1999Sep 2 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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