Local structural characterization of epitaxial a-plane InGaN/GaN thin films by transmission electron microscopy

T. Yamazaki*, K. Kusakabe, N. Nakanishi, Kazuhiro Ohkawa, I. Hashimoto

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

Structural analysis of the submicron area of an InGaN thin film was conducted using transmission electron microscopy. By obtaining the selected area diffraction patterns of c-plane InGaN/GaN and a-plane InGaN/GaN films, the local lattice parameters were measured. Coherent growths were checked at the respective samples for different growth orientations, and the In concentration of the InGaN layer was also measured. Furthermore, there is a slight tilt in the growth direction between the GaN and InGaN layers in the a-plane InGaN/GaN film.

Original languageEnglish (US)
Pages (from-to)1738-1741
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume3
DOIs
StatePublished - Jul 31 2006
Event6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany
Duration: Aug 28 2005Sep 2 2005

ASJC Scopus subject areas

  • Condensed Matter Physics

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